Sub-nanosecond Flash Memory Device Based on 2D Materials: Fabrication and Modeling

Researchers fabricated a sub-nanosecond flash memory device based on two-dimensional (2D) materials (WSe2, graphene, and hBN). The fabrication process involved e-beam lithography, atomic layer deposition, and mechanical exfoliation. The device's structure and performance were characterized using atomic force microscopy, transmission electron microscopy, and energy-dispersive spectroscopy. A quasi-2D model was developed to simulate the device's electrical characteristics, and its validity was experimentally verified. This research provides new avenues for developing high-performance, low-power next-generation flash memory devices.