Negative Capacitance Breaks Through GaN Transistor Performance Barrier

Scientists in California have discovered that integrating an electronic material exhibiting the unusual property of negative capacitance can help high-power gallium nitride (GaN) transistors overcome a performance bottleneck. Research suggests negative capacitance helps circumvent a physical limit that typically forces trade-offs between a transistor's performance in the 'on' and 'off' states. This research indicates that negative capacitance, extensively studied in silicon, may have broader applications than previously understood, potentially impacting GaN power electronics in 5G base stations and compact cellphone power adapters.