Fudan University Achieves Breakthrough: 400-Picosecond Flash Memory

Researchers at Fudan University have developed a groundbreaking 400-picosecond flash memory device, boasting a program speed of 25 billion times per second. This surpasses existing speed limits in information storage, achieving a record-breaking speed by leveraging two-dimensional Dirac band structure and ballistic transport characteristics for super-injection of charge. This technology promises significant applications in ultra-fast AI models, driving upgrades in storage technology and strengthening China's leadership in the field.