Fudan University Develops Record-Breaking Flash Memory: PoX
A research team at Fudan University has created PoX, a non-volatile flash memory boasting an unprecedented single-bit programming speed of 400 picoseconds—approximately 25 billion operations per second. Published in Nature, this breakthrough pushes non-volatile memory into speeds previously exclusive to volatile memory, setting a new benchmark for AI hardware. By replacing silicon channels with 2D Dirac graphene and leveraging ballistic charge transport, the team overcame the speed limitations of traditional flash memory. PoX's potential applications include eliminating high-speed SRAM caches in AI chips, reducing energy consumption and chip size, and enabling database engines to store entire working sets in persistent RAM. This innovation could reshape storage technology and open new application scenarios.