China's Breakthrough: World's First 2D Low-Power GAAFET Transistor
2025-05-04
A Peking University research team published in Nature, announcing the world's first two-dimensional low-power GAAFET transistor. This transistor, based on the novel 2D semiconductor material Bi₂O₂Se, outperforms comparable products from Intel, TSMC, and Samsung. This breakthrough could help China leapfrog in the chip industry, especially given the backdrop of US technological sanctions against China.