Enhanced Spin-Orbit Torque via Orbital Hall Effect for High-Density SOT-MRAM
2025-03-01
Researchers significantly improved Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) device performance by leveraging the enhanced orbital Hall effect (OHE) of Ru, Nb, and Cr layers in combination with a perpendicularly magnetized [Co/Ni]3 ferromagnetic layer. Experiments showed a ~30% increase in damping-like torque efficiency with a positive sign for the Ru/Pt OHE layer compared to pure Pt. This resulted in a ~20% reduction in switching current across >250 devices and a >60% reduction in switching power. This work paves the way for next-generation SOT-MRAM devices with enhanced performance for high-density cache memory applications.